|
Ambient Ambient to which substrate is exposed during processing |
methanol/carbon dioxide/air |
Batch size |
1 |
Pressure Pressure of process chamber during processing |
77 atm |
Process duration |
40 min |
Sides processed |
both |
Temperature |
35 °C |
Wafer size |
|
Equipment |
GT Technologies Supercritical CO2 Cleaner Dryer |
Equipment characteristics: |
Wafer geometry Types of wafers this equipment can accept |
no-flat, 1-flat, 2-flat, notched |
Wafer holder Device that holds the wafers during processing. |
stainless steel |
Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
alumina, gallium arsenide, gallium phosphide, germanium, glass (category), indium phosphide, metal (category), Pyrex (Corning 7740), quartz (single crystal), sapphire, silicon, Borofloat (Schott), silicon dioxide, silicon germanium, silicon on insulator, silicon on sapphire |
Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1600 µm |
Comments: |
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