|
Batch size |
1 |
Chuck type |
SEM stage & sample holder |
Energy Energy used during process |
500 .. 30000 eV |
Magnifications |
50 .. 500000 |
Materials |
aluminum oxide (category), chromium, chromium/gold, gallium arsenide, gold, nickel, platinum, PMMA, polysilicon, silicon (doped), silicon carbide, silicon dioxide, silicon nitride, silicon nitride on silicon dioxide, silicon on insulator, titanium |
Wafer size |
|
Equipment |
Hitachi SEM |
Equipment characteristics: |
Piece dimension Range of wafer piece dimensions the equipment can accept |
3 .. 100 mm |
Piece geometry Geometry of wafer pieces the equipment can accept |
circular, irregular, other, rectangular |
Piece thickness Range of wafer piece thickness the equipment can accept |
200 .. 700 µm |
Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
alumina, gallium arsenide, silicon, silicon carbide, titanium |
Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 700 µm |