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Zinc Oxide wet etch: View
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Zinc Oxide wet etch
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 3 µm
0 .. 3 µm
Solutions and their concentrations.
acetic acid/phosphoric acid/water [1:1:30]
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 4, polysilicon: 50, silicon nitride: 50, zinc oxide: 1
Types of wafers this equipment can accept
Device that holds the wafers during processing.
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
List or range of wafer thicknesses the tool can accept
300 .. 600 µm