Process Hierarchy

  Zinc Oxide wet etch
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 3 µm
0 .. 3 µm
Batch size 12
Etch rate 1.5 µm/min
Etchant
Solutions and their concentrations.
acetic acid/phosphoric acid/water [1:1:30]
Material zinc oxide
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 4, polysilicon: 50, silicon nitride: 50, zinc oxide: 1
Sides processed both
Temperature 23 °C
Wafer size
Wafer size
Equipment Sink 7
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
1-flat, no-flat
Wafer holder
Device that holds the wafers during processing.
teflon cassette
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 600 µm