Process Hierarchy

on front
  Zinc Oxide wet etch Down
Materialzinc oxide
Refractive index1 .. 4Thickness0 .. 50 µm
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 3 µm
0 .. 3 µm
Batch size 12
Material zinc oxide
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 4, polysilicon: 50, silicon nitride: 50, zinc oxide: 1
Wafer size
Wafer size