Note: The CAD material made available on and through this web page is the property of the MEMS and Nanotechnology Exchange and intended solely for use in designing masks to be made through the MEMS and Nanotechnology Exchange or masks to be used in MEMS and Nanotechnology Exchange runs. This material may not be reproduced, republished or distributed without our express written permission.

1. Tool specific templates

1.1. Steppers

1.1.1. GCA 10x I-line stepper
GDSII LayerCIF LayerDescription

fiducials
[CIF (2K)] [GDSII (4K)]

1

CAL

Fiducials, open region indicates maximum device region.
alignment mark at (0,0)
[CIF (7K)] [GDSII (12K)]

1

CAL

Alignment mark at (0,0)
fiducials with alignment mark at (0,0)
[CIF (8K)] [GDSII (12K)]

1

CAL

Fiducials with alignment mark at (0,0)
1.1.2. GCA 10x G-line stepper
GDSII LayerCIF LayerDescription
fiducials
[CIF (2K)] [GDSII (4K)]

1

CAL

Fiducials, open region indicates maximum device region.
alignment mark at (0,0)
[CIF (7K)] [GDSII (10K)]

1

CAL

Alignment mark at (0,0)
fiducials with alignment mark at (0,0)
[CIF (8K)] [GDSII (12K)]

1

CAL

Fiducials with alignment mark at (0,0)

1.2. Contact Aligners

1.2.1. Generic contact aligner alignment marks
GDSII LayerCIF LayerDescription
flat alignment marks
[CIF, 4-inch (14K)] [GDSII, 4-inch (16K)] [CIF, 6-inch (11K)] [GDSII, 6-inch (10K)]

1

CAL

Wafer map

2

CAM

Flat alignment mark

3

CAN

Flat alignment mark (reverse polarity)
alignment marks
[CIF (73K)] [GDSII (145K)]

1

CAL

Wafer map

2

CAM

Alignment mark

3

CAN

Alignment mark (reverse polarity)
1.2.2. Electronic Visions 420
GDSII LayerCIF LayerDescription
front to back alignment keys
[CIF (2K)] [GDSII (4K)]

1

CAL

Alignment feature on wafer

2

CAM

Alignment feature on mask
map for alignment mark placement for front to front alignment
[CIF, 4-inch (8K)] [GDSII, 4-inch (4K)] [CIF, 6-inch (8K)] [GDSII, 6-inch (4K)]

1

CAL

Wafer map

2

CAM

Area in which alignment marks should fall (one in each block, both should be on the same horizontal line, preferably the centerline).
map for alignment mark placement for front to back alignment

[CIF, 4-inch and 6-inch (15K)] [GDSII, 4-inch and 6-inch (8K)]

1

CAL

Wafer map

2

CAM

Area in which alignment marks should fall (one in each block, both should be on the same horizontal line, preferably the centerline).
1.2.3. Electronic Visions 620
GDSII LayerCIF LayerDescription
front to back alignment keys
[CIF (2K)] [GDSII (4K)]

1

CAL

Alignment feature on wafer

2

CAM

Alignment feature on mask
map for alignment mark placement for front to front alignment
[CIF, 4-inch (8K)] [GDSII, 4-inch (4K)] [CIF, 6-inch (8K)] [GDSII, 6-inch (4K)]

1

CAL

Wafer map

2

CAM

Area in which alignment marks should fall (one in each block, both should be on the same horizontal line, preferably the centerline).
map for alignment mark placement for front to back alignment
[CIF (15K)] [GDSII (8K)]

1

CAL

Wafer map

2

CAM

Area in which alignment marks should fall (one in each block, both should be on the same horizontal line, preferably the centerline).
1.2.4. Karl Suss MA-6
GDSII LayerCIF LayerDescription
map for alignment mark placement for front to front alignment
[CIF, 4-inch (8K)] [GDSII, 4-inch (4K)] [CIF, 6-inch (8K)] [GDSII, 6-inch (4K)]

1

CAL

Wafer map

2

CAM

Area in which alignment marks should fall (one in each block, both should be on the same horizontal line, preferably the centerline).
map for alignment mark placement for front to back alignment
[CIF, 4-inch (8K)] [GDSII, 4-inch (4K)] [CIF, 6-inch (8K)] [GDSII, 6-inch (4K)]

1

CAL

Wafer map

2

CAM

Area in which alignment marks should fall (one in each block, both should be on the same horizontal line, preferably the centerline).

2. Test Structures

2.1. Etch/step height boxes
[CIF (3K)] [GDSII (4K)]
GDSII LayerCIF LayerDescription

1

CAL

Boxes
Boxes open a window in material which may be used to measure etch depth, for example by stylus profilometry or spectrophotometry.
2.2. Resolution structures
[CIF (16K)] [GDSII (36K)]
GDSII LayerCIF LayerDescription

1

CAL

Resolution bars
Sets of lines to measure resolution of an exposure.
2.3. Registration vernier
[CIF (10K)] [GDSII (20K)]
GDSII LayerCIF LayerDescription

1

CAL

One side of vernier

2

CAM

Other side
Vernier enables accurate measurement of layer to layer registration. Should be places at least two locations on the wafer (preferably far apart) if wish to measure rotation as well as shift in x and y.
2.4. Critical dimension measurement
[CIF (5K)] [GDSII (8K)]
GDSII LayerCIF LayerDescription

1

CAL

Crosses
Set of critical dimension crosses. Necessary to have cross with width of minimum feature size for mask maker to measure if the critical dimension is not embodied as a line anywhere in the layout. Crosses of smaller dimensions than the critical dimension should be deleted (although they will probably be dropped from the data when made in to masks anyway).
2.5. Design rule measurement set
[CIF (995K)] [GDSII (1.8Mb)]

1

CAL

Lines and text

2

CAM

Steps
Should be used in conjunction with vernier (as measurements need to be corrected for misalignment). Should be able to determine for which line width and distance over step that the line properties are adequate, to determine design rules for the two interacting layers.

3. Other

3.1. Alphabet and numbers
[CIF (8K)] [GDSII (12K)]
GDSII LayerCIF LayerDescription

1

CAL

Letters and Numbers
3.2. DARPA Logo 1
[CIF (61K)] [GDSII (55K)]
GDSII LayerCIF LayerDescription

1

CAL

Logo

2

CAM

Text ("DARPA")
3.3. DARPA Logo 2
[CIF (51K)] [GDSII (45K)]
GDSII LayerCIF LayerDescription

1

CAL

Logo with integrated text
3.4. MEMS Exchange Logo
[CIF (44K)] [GDSII (22K)]
GDSII LayerCIF LayerDescription

1

CAL

MEMS Exchange Logo