Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Silicon wet etch (KOH)
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 600 µm
0 .. 600 µm
Batch size 25
Etch rate 1 µm/min
Material silicon
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 silicon: 1
Sides processed both
Temperature 80 °C
Wafer size
Wafer size
Equipment General user wet bench
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 teflon cassette
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 600 µm
Comments:
  • A layer of silicon nitride is needed as mask layer. Silicon dioxide can also be used for short etches.