Process Hierarchy

  Silicon wet etch (KOH)
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 600 µm
0 .. 600 µm
Batch size 25
Etch rate 1 µm/min
Material silicon
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
silicon: 1
Sides processed both
Temperature 80 °C
Wafer size
Wafer size
Equipment General user wet bench
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
teflon cassette
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 600 µm
  • A layer of silicon nitride is needed as mask layer. Silicon dioxide can also be used for short etches.