How to Start
Silicon wet etch (KOH): View
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Silicon wet etch (KOH)
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 600 µm
0 .. 600 µm
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
General user wet bench
Device that holds the wafers during processing.
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
List or range of wafer thicknesses the tool can accept
300 .. 600 µm
A layer of silicon nitride is needed as mask layer. Silicon dioxide can also be used for short etches.