Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon DRIE II
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 50 .. 650 µm
50 .. 650 µm
Allowed materials photoresist (category), silicon, silicon dioxide
Ambient
Ambient to which substrate is exposed during processing
 Bosch process
Aspect ratio 5
Edge profile
Free form text field for description of edge profile
 89 degrees
Etch rate 2 µm/min
Etchant
Solutions and their concentrations.
 Bosch process
Field geometry
Shape of field with dimensions characterized by the maximum field size
 circle
Material silicon
Max field size 144 mm
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 80, silicon: 1
Sides processed either
Uniformity 4
Wafer size
Wafer size
Equipment STS SOI advanced Si etcher
Equipment characteristics:
Batch sizes 100 mm: 1, 150 mm: 1
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, no-flat, notched
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 1500 µm
Comments:
  • Only Silicon is allowed to be exposed.
  • Silicon dioxide can be used as etch stop.
  • 3mm open ring around the wafer is required.
  • Metals are NOT allowed on wafers.
  • Through-wafer etches require additional processing.
  • The uniformity data for 400um deep etch with <15% open area.