Process Hierarchy

  Photoresist strip (non-metal)
Batch size 25
Solutions and their concentrations.
sulfuric acid/hydrogen peroxide
Material photoresist (category)
Process duration 40 min
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 1
Sides processed both
Temperature 120 °C
Wafer size
Wafer size
Equipment Nonmetal wet bench
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
teflon chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, glass (category), quartz (single crystal), sapphire, silicon on insulator, silicon on sapphire
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 550 µm
  • Doesn't etch silicon, silicon dioxide, silicon nitride, or silicon on insulator.