Process Hierarchy

  KOH etch
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 600 µm
0 .. 600 µm
Etch rate 10000 Å/min
Material silicon
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
silicon: 1
Sides processed both
Temperature 80 °C
Wafer size
Wafer size
Equipment Sink 3
Equipment characteristics:
Batch sizes 100 mm: 5, 150 mm: 5
MOS clean no
Wafer holder
Device that holds the wafers during processing.
teflon chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 600 µm
  • Mask layer must be silicon nitride or thermal silicon dioxide.