Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon nitride RIE
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0.1 .. 0.5 µm
0.1 .. 0.5 µm
Ambient
Ambient to which substrate is exposed during processing
 sulfur hexafluoride
Aspect ratio 1
Batch size 1
Etch rate 0.25 µm/min
Excluded materials gold (category), copper
Material silicon nitride
Pressure
Pressure of process chamber during processing
 300 mTorr
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 0.86, silicon nitride: 1
Sides processed either
Temperature 80 °C
Wafer size
Wafer size
Equipment Lam 490
  • No wafers with metal layers can be processed with this equipment.
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 stainless steel
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 500 µm
Comments:
  • No metals allowed in this etcher
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.