Process Hierarchy

on front
  Silicon nitride RIE
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0.1 .. 0.5 µm
0.1 .. 0.5 µm
Ambient to which substrate is exposed during processing
sulfur hexafluoride
Aspect ratio 1
Batch size 1
Etch rate 0.25 µm/min
Excluded materials gold (category), copper
Material silicon nitride
Pressure of process chamber during processing
300 mTorr
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 0.86, silicon nitride: 1
Sides processed either
Temperature 80 °C
Wafer size
Wafer size
Equipment Lam 490
  • No wafers with metal layers can be processed with this equipment.
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
stainless steel
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 500 µm
  • No metals allowed in this etcher
Extra terms