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Silicon dioxide plasma etch: View
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Silicon dioxide plasma etch
Depth of material removed by etch process
Depth of material removed by etch process, must be 0.1 .. 2 µm
0.1 .. 2 µm
Ambient to which substrate is exposed during processing
gold (category), copper
Pressure of process chamber during processing
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 2.5, silicon dioxide: 1
Device that holds the wafers during processing.
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
List or range of wafer thicknesses the tool can accept
400 .. 600 µm
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.