Process Hierarchy

on front
  Silicon dioxide plasma etch
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 2 µm
0 .. 2 µm
Ambient to which substrate is exposed during processing
Batch size 12
Etch rate 4000 Å/min
Solutions and their concentrations.
helium, methane, trifluoromethane
Excluded materials gold
Material silicon dioxide
Num dummies 3
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 2.15, silicon dioxide: 1
Setup time 60 min
Sides processed either
Temperature 23 °C
Wafer size
Wafer size
Equipment Lam 590 Plasma Etcher
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
helium clamp
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 2000 µm