Process Hierarchy

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  Silicon DRIE (Bosch Process)
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 750 µm
0 .. 750 µm
Aspect ratio 20
Batch size 25
Etch rate 4 µm/min
Material silicon
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
AZ 9245: 90, silicon dioxide: 150, silicon: 1
Sides processed either
Temperature 25 °C
Wafer size
Wafer size
Equipment Unaxis VLR 700 Bosch Chamber
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
Wafer holder
Device that holds the wafers during processing.
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
250 .. 800 µm