Process Hierarchy

on front
  Polysilicon RIE
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 2 µm
0 .. 2 µm
Batch size 12
Etch rate 0.5 µm/min
Excluded materials gold
Material polysilicon
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 1.4, polysilicon: 1
Sides processed either
Temperature 60 °C
Wafer size
Wafer size
Equipment Lam 4
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
Wafer holder
Device that holds the wafers during processing.
helium clamp
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 2000 µm