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Photoresist develop (Shipley 1813): View
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Photoresist develop (Shipley 1813)
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 5 µm
0 .. 5 µm
Agent that reacts with masking layer (e.g., photoresist) to etch it selectively.
gold (category), copper
Shape of feature with dimensions characterized by the minimum feature size
Shape of field with dimensions characterized by the maximum field size
Max field size
Min feature size
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
Shipley 1813: 1
Air Control Microvoid
Device that holds the wafers during processing.
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon dioxide, Borofloat (Schott), alumina
List or range of wafer thicknesses the tool can accept
300 .. 1000 µm
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.