on front Silicon nitride plasma etch |
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| Process characteristics: |
| Depth Depth of material removed by etch process |
|
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| Ambient Ambient to which substrate is exposed during processing |
bromotrifluoromethane, sulfur hexafluoride |
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| Etch rate |
0.06 µm/min |
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| Material |
silicon nitride |
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| Pressure Pressure of process chamber during processing |
200 mTorr |
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| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
photoresist (category): 1.3, silicon nitride: 1 |
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| Sides processed |
either |
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| Temperature |
23 °C |
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| Wafer size |
|
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| Equipment |
Drytek2 |
| Equipment characteristics: |
| Batch sizes |
100 mm: 6, 50 mm: 6, 75 mm: 6 |
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| Piece geometry Geometry of wafer pieces the equipment can accept |
circular, irregular, rectangular |
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| Piece thickness Range of wafer piece thickness the equipment can accept |
300 .. 600 µm |
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| Wafer holder Device that holds the wafers during processing. |
electrode |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
quartz (single crystal), silicon, silicon on insulator, silicon on sapphire |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 600 µm |
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| Comments: |
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