Photoresist strip (metal) |
|
| Batch size |
25 |
| Etchant Solutions and their concentrations. |
PRX-127 |
| Material |
photoresist (category) |
| Process duration |
20 min |
| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
photoresist (category): 1 |
| Sides processed |
both |
| Temperature |
50 °C |
| Wafer size |
|
| Equipment |
Metal wet bench |
| Equipment characteristics: |
| Wafer geometry Types of wafers this equipment can accept |
no-flat, 1-flat |
| Wafer holder Device that holds the wafers during processing. |
teflon cassette |
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, glass (category), quartz (single crystal), sapphire, silicon on insulator, silicon on sapphire |
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 700 µm |
| Comments: |
|