|
| Process characteristics: |
| Depth Depth of material removed by etch process |
|
|---|
| Batch size |
6 |
|---|
| Etch rate |
2.3 µm/min |
|---|
| Etchant Solutions and their concentrations. |
HF [49%] |
|---|
| Material |
silicon dioxide |
|---|
| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
phosphosilicate glass: 0.6, silicon dioxide: 1 |
|---|
| Sides processed |
both |
|---|
| Temperature |
23 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
Wetbench
|
| Equipment characteristics: |
| Piece dimension Range of wafer piece dimensions the equipment can accept |
0 .. 4 inch |
|---|
| Piece geometry Geometry of wafer pieces the equipment can accept |
triangular shard, other, rectangular, irregular, circular |
|---|
| Piece thickness Range of wafer piece thickness the equipment can accept |
100 .. 1000 µm |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer holder Device that holds the wafers during processing. |
teflon carrier |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
100 .. 1000 µm |
|---|
| Comments: |
|
