|
| Batch size |
25 |
|---|
| Material concentrations |
HCl/hydrogen peroxide/water [1:1:5] |
|---|
| Process duration |
20 min |
|---|
| Sides processed |
both |
|---|
| Temperature |
70 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
Diffusion wet bench |
| Equipment characteristics: |
| Wafer holder Device that holds the wafers during processing. |
teflon chuck |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, glass (category), quartz (single crystal), sapphire, silicon on insulator, silicon on sapphire |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 550 µm |
|---|
| Comments: |
|
