on front Silicon Dioxide RIE (non-clean) |
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| Process characteristics: |
| Depth Depth of material removed by etch process |
|
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| Allowed metals |
Au, Al, Mo, W, Ti, Ni, Ta |
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| Edge profile Free form text field for description of edge profile |
vertical |
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| Etch rate |
280 Å/min |
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| Material |
silicon dioxide |
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| Pressure Pressure of process chamber during processing |
40 mTorr |
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| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
photoresist (category): 2, silicon dioxide: 1, silicon nitride: 1 |
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| Sides processed |
either |
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| Temperature |
25 °C |
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| Wafer size |
|
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| Equipment |
SemiGroup RIE |
| Equipment characteristics: |
| Batch sizes |
100 mm: 4, 150 mm: 1, 50 mm: 5, 75 mm: 4 |
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| MOS clean |
no |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, silicon on insulator, glass (category) |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1000 µm |
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| Comments: |
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