Process Hierarchy

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  Silicon Dioxide RIE (non-clean)
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 1.5 µm
0 .. 1.5 µm
Allowed metals Au, Al, Mo, W, Ti, Ni, Ta
Edge profile
Free form text field for description of edge profile
Etch rate 280 Å/min
Material silicon dioxide
Pressure of process chamber during processing
40 mTorr
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 2, silicon dioxide: 1, silicon nitride: 1
Sides processed either
Temperature 25 °C
Wafer size
Wafer size
Equipment SemiGroup RIE
Equipment characteristics:
Batch sizes 100 mm: 4, 150 mm: 1, 50 mm: 5, 75 mm: 4
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon on insulator, glass (category)
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm
  • This tool is gold-contaminated.