Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Wire bonding
Process characteristics:
1st bonded material
Bondpad material on the die.
1st bonded material
Bondpad material on the die.
2nd bonded material
Bondpad material on the package.
2nd bonded material
Bondpad material on the package.
Number of bond wires
Number of bond wires per chip.
Number of bond wires
Number of bond wires per chip., must be 1 .. 100
1 .. 100
Wire material
Bond wire material.
Wire material
Bond wire material.
Ambient
Ambient to which substrate is exposed during processing
 air
Batch size 1
Excluded materials gold (category), copper
Min bond pad size
Minimum characteristic dimension of bond pad.
 100 µm
Min bond pad spacing
Minimum spacing between bond pads.
 100 µm
Equipment Wire bonder
Equipment characteristics:
Die dimension
Characteristic dimension of dies (e.g., side length of square) the equipment can accept
 3.75 inch
Die materials
List of allowed materials for dies accepted by this equipment
 alumina, silicon
Comments:
  • Desired bonding diagrams should be provided for review.
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.