Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Deep RIE (Bosch process)
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 550 µm
0 .. 550 µm
Perform handle wafer mounting
Perform handle wafer mounting*
yes no
Aspect ratio 20
Batch size 1
Edge profile
Free form text field for description of edge profile
 Anisotropic
Etch rate 1 µm/min
Etchant
Solutions and their concentrations.
 Bosch process
Material silicon
Min feature size 0.8 µm
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 75, silicon dioxide: 150, silicon: 1
Sides processed either
Temperature 45 °C
Wafer size
Wafer size
Equipment STS Deep RIE
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 helium clamp
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 2000 µm
Comments:
  • Etch rate depends on feature
    size -- ranges from 0.3 .. 4
    um/min.; 1 um/min. is average.
  • If etching all the way through
    wafer, may need to bond wafer
    to another wafer:
    approximately 1 hour.
  • Minimum feature size depends
    on resist thickness.
  • Gold contaminated wafers not
    allowed.