Process Hierarchy

  Photoresist develop (Shipley 1818)
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 5 µm
0 .. 5 µm
Agent that reacts with masking layer (e.g., photoresist) to etch it selectively.
Microposit 351
Material Shipley 1818
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
Shipley 1818: 1
Sides processed both
Wafer size
Wafer size
Equipment Hood #1
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
no-flat, 1-flat, 2-flat, notched
Wafer holder
Device that holds the wafers during processing.
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
glass (category), Pyrex (Corning 7740), quartz (single crystal), silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
100 .. 500 µm