Piranha clean II (non-MOS clean) |
|
Batch size |
24 |
Material concentrations |
sulfuric acid/hydrogen peroxide [98:2] |
Process duration |
10 min |
Setup time |
30 min |
Sides processed |
both |
Temperature |
120 °C |
Wafer size |
|
Equipment |
VLSI sink 8 |
Equipment characteristics: |
MOS clean |
no |
Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat |
Wafer holder Device that holds the wafers during processing. |
teflon cassette |
Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon on insulator, silicon, glass (category) |
Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 600 µm |
Comments: |
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