Process Hierarchy

  Piranha clean II (non-MOS clean)
Batch size 24
Material concentrations sulfuric acid/hydrogen peroxide [98:2]
Process duration 10 min
Setup time 30 min
Sides processed both
Temperature 120 °C
Wafer size
Wafer size
Equipment VLSI sink 8
Equipment characteristics:
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
teflon cassette
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon on insulator, silicon, glass (category)
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 600 µm
  • This is not a MOS-CLEAN process.
  • Wafers with metals and/or photoresist are not allowed.
  • Gold contaminated wafers are not allowed.