Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Photoresist develop (PMMA)
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 1000 µm
0 .. 1000 µm
Developer
Agent that reacts with masking layer (e.g., photoresist) to etch it selectively.
 GG
Material PMMA
Min feature size 5 µm
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 PMMA: 1
Sides processed both
Temperature 35 °C
Wafer size
Wafer size
Equipment Wetbench
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
 no-flat, 1-flat, 2-flat, notched
Wafer holder
Device that holds the wafers during processing.
 teflon carrier
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 glass (category), Pyrex (Corning 7740), quartz (single crystal), silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 1500 µm