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Photoresist develop (PMMA): View
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Photoresist develop (PMMA)
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 1000 µm
0 .. 1000 µm
Agent that reacts with masking layer (e.g., photoresist) to etch it selectively.
Min feature size
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
Types of wafers this equipment can accept
no-flat, 1-flat, 2-flat, notched
Device that holds the wafers during processing.
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
glass (category), Pyrex (Corning 7740), quartz (single crystal), silicon
List or range of wafer thicknesses the tool can accept
300 .. 1500 µm