Process Hierarchy

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  Spectrophotometric film thickness measurement
Batch size 1
Materials photoresist (negative) (category), photoresist (negative) on silicon dioxide, photoresist (positive) (category), photoresist (positive) in silicon dioxide, polyimide (category), polysilicon on silicon dioxide, silicon dioxide, silicon nitride, silicon nitride on silicon dioxide
Refractive index 0 .. 4
Sides processed either
Thickness 0.005 .. 50 µm
Wafer size
Wafer size
Equipment Nanospec
  • Instrument can measure films using visible light source for ordinary thicknesses, and UV light source for very thin films.
  • Visible light source thickness range: 200A to 20um
  • UV light source thickness range: 25A to 20um
  • Polysilicon thickness maximum: 1.5um
Equipment characteristics:
Piece dimension
Range of wafer piece dimensions the equipment can accept
10 .. 150 mm
Piece geometry
Geometry of wafer pieces the equipment can accept
circular, irregular, other, rectangular, triangular shard
Piece thickness
Range of wafer piece thickness the equipment can accept
100 .. 1000 µm
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat, notched
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
gallium arsenide, indium phosphide, silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
100 .. 150 µm
  • Pricing covers up to 5 measurement sites on one wafer. Additional measurements will require additional pricing.