Poly-Ge RIE: View
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Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 2 µm
0 .. 2 µm
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 2.7, poly-Germanium: 1
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon on insulator, silicon
List or range of wafer thicknesses the tool can accept
300 .. 600 µm
Lam5 is an automatic, cassette-to-cassette, TCP etcher for Poly-Si etching. This system is set up as a 6” poly etcher, but it is also capable of processing 4” wafers on a six-inch pocket or carrier wafers.
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