Process Hierarchy

on front
  Down Stream Plasma Ashing / Stripping
Process characteristics:
Depth 0 .. 10 µm
Etch type dry isotropic
Gas Oxygen, H2N2, CF4
Sides processed either
Temperature 250 .. 270 °C
Wafer size
Wafer size
Equipment Axcelis Down Stream Plasma Asher / Stripper
Equipment characteristics:
Batch sizes 100 mm: 25, 150 mm: 25
Wafer holder
Device that holds the wafers during processing.
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon on insulator, sapphire, quartz (fused silica), silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
250 .. 800 µm