Process Hierarchy

on front
  Silicon nitride plasma etch (gold contaminated)
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 2 µm
0 .. 2 µm
Ambient to which substrate is exposed during processing
bromotrifluoromethane, sulfur hexafluoride
Batch size 1
Etch rate 0.05 µm/min
Material silicon nitride
Min feature size 0.5 µm
Pressure of process chamber during processing
200 mTorr
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 2, silicon nitride: 1
Sides processed either
Temperature 23 °C
Wafer size
Wafer size
Equipment Drytek1
Equipment characteristics:
Piece geometry
Geometry of wafer pieces the equipment can accept
circular, irregular, rectangular
Piece thickness
Range of wafer piece thickness the equipment can accept
300 .. 600 µm
Wafer holder
Device that holds the wafers during processing.
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
quartz (single crystal), sapphire, silicon, silicon on insulator, silicon on sapphire
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 600 µm
  • This equipment is gold contaminated.