Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  HF etch
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 4 µm
0 .. 4 µm
Batch size 25
Etch rate 0.165 µm/min
Etchant
Solutions and their concentrations.
 HF [49%]
Material silicon dioxide
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 silicon dioxide: 1
Sides processed both
Temperature 25 °C
Undercut rate
Length of undercut as a function of time
 0.165 µm/min
Wafer size
Wafer size
Equipment SP acid #2 wet bench
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 teflon chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 1200 µm