Process Hierarchy

  Aluminum etch
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 10 µm
0 .. 10 µm
Batch size 1
Etch rate 0.008 µm/s
Solutions and their concentrations.
Transene Aluminum Etchant Type A (phosphoric acid/nitric acid/acetic acid)
Mask materials
Materials that can be used to mask etching.
photoresist (category)
Material aluminum
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
aluminum: 1
Sides processed both
Temperature 40 °C
Wafer size
Wafer size
Equipment Acid/etch wet bench
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
teflon chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1200 µm