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Aluminum wet etch: View
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Aluminum wet etch
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 2 µm
0 .. 2 µm
Solutions and their concentrations.
Ashland's 16:1:1:2 Aluminum Etch
Materials that can be used to mask etching.
Min feature size
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
Length of undercut as a function of time
Metal wet bench
Types of wafers this equipment can accept
Device that holds the wafers during processing.
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, glass (category), quartz (single crystal), sapphire, silicon on insulator, silicon on sapphire
List or range of wafer thicknesses the tool can accept
300 .. 700 µm
MOS clean process.