Process Hierarchy

on front
  G-line develop (OCG 825 35CS)
Agent that reacts with masking layer (e.g., photoresist) to etch it selectively.
OCG 934
Etch rate 1 µm/min
Material OCG 825 35CS
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
OCG 825 35CS: 1
Setup time 30 min
Sides processed either
Temperature 23 °C
Wafer size
Wafer size
Equipment SVG-8132CTD Develop Track
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
vacuum chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1000 µm