Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  ESCA (Electron Spectroscopy for Chemical Analysis)
Process characteristics:
Materials
Material(s) expected to be found on the surface of the sample.
Materials
Available  
Selected
Material(s) expected to be found on the surface of the sample.
Thickness
Thickness of the top material layer on the sample.
Thickness
Thickness of the top material layer on the sample., must be 0.1 .. 1 µm
0.1 .. 1 µm
Excluded materials gold (category), copper
Sides inspected
The sides of the wafer inspected by the process
 either
Equipment Phi 5600 ESCA system
Equipment characteristics:
MOS clean no
Piece dimension
Range of wafer piece dimensions the equipment can accept
 0 .. 25 mm
Piece geometry
Geometry of wafer pieces the equipment can accept
 circular, irregular, other, rectangular, triangular shard
Piece thickness
Range of wafer piece thickness the equipment can accept
 0 .. 2 mm
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 alumina, BK7, Borofloat (Schott), ceramic, copper, Corning 1737, Foturan (Schott), fused silica, gallium arsenide, gallium phosphide, germanium, glass (Hoya), glass-ceramic, indium phosphide, lithium niobate, other, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon germanium, silicon on insulator, silicon on sapphire, titanium
Comments:
  • The system includes a conventional dual anode x-ray source (Mg & Al), a 20" hemispherical electron energy analyzer, a XYZT stage with 8 sample storage, and an inert gas sputtering source (PHI 04-303) for sample cleaning and depth profiling.
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.