on front Polymer clean-up |
|
| Ambient Ambient to which substrate is exposed during processing |
oxygen |
|---|
| Etch rate |
24.4 nm/min |
|---|
| Material |
polymer (category) |
|---|
| Pressure Pressure of process chamber during processing |
150 mTorr |
|---|
| Process duration |
150 s |
|---|
| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
polymer (category): 1 |
|---|
| Sides processed |
either |
|---|
| Temperature |
50 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
Drytek2 |
| Equipment characteristics: |
| Batch sizes |
100 mm: 6, 50 mm: 6, 75 mm: 6 |
|---|
| Piece geometry Geometry of wafer pieces the equipment can accept |
circular, irregular, rectangular |
|---|
| Piece thickness Range of wafer piece thickness the equipment can accept |
300 .. 600 µm |
|---|
| Wafer holder Device that holds the wafers during processing. |
electrode |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
quartz (single crystal), silicon, silicon on insulator, silicon on sapphire |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 600 µm |
|---|
| Comments: |
|
