Process Hierarchy

on front
  Polymer clean-up
Ambient to which substrate is exposed during processing
Etch rate 24.4 nm/min
Material polymer (category)
Pressure of process chamber during processing
150 mTorr
Process duration 150 s
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
polymer (category): 1
Sides processed either
Temperature 50 °C
Wafer size
Wafer size
Equipment Drytek2
Equipment characteristics:
Batch sizes 100 mm: 6, 50 mm: 6, 75 mm: 6
Piece geometry
Geometry of wafer pieces the equipment can accept
circular, irregular, rectangular
Piece thickness
Range of wafer piece thickness the equipment can accept
300 .. 600 µm
Wafer holder
Device that holds the wafers during processing.
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
quartz (single crystal), silicon, silicon on insulator, silicon on sapphire
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 600 µm
  • Removes polymers formed by plasma etch processes.