Process Hierarchy

  Chromium wet etch (Low and High Power Depositions)
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0.01 .. 2 µm
0.01 .. 2 µm
Batch size 3
Etch rate 0.0168 µm/min
Solutions and their concentrations.
Transene Nichrome TFN
Excluded materials gold (category), copper
Material chromium
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
chromium: 1, photoresist (category): 10.5
Sides processed both
Temperature 25 °C
Wafer size
Wafer size
Equipment Air Control Microvoid
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
teflon carrier
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon dioxide, Borofloat (Schott), alumina
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1000 µm
Extra terms