Process Hierarchy

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  Isotropic plasma etch
Process characteristics:
Depth
Depth to etch in material.
Depth
Depth to etch in material.
unconstrained
Etching source gases
Specify preferred source gases for the etch process (if known).
Etching source gases
Available  
Selected
Specify preferred source gases for the etch process (if known).
Material
Material to be etched.
Material
Material to be etched.
Minimum feature size (masked)
The dimension of the smallest masked feature to be protected during the etch.
Minimum feature size (masked)
The dimension of the smallest masked feature to be protected during the etch.
unconstrained
Minimum feature size (open)
The dimension of the smallest unmasked (open) feature to be etched.
Minimum feature size (open)
The dimension of the smallest unmasked (open) feature to be etched.
unconstrained
Sides processed either
Equipment