Titanium surface treatment |
|
Depth |
100 nm |
Etch rate |
100 nm/min |
Etchant Solutions and their concentrations. |
NaOH/hydrogen peroxide |
Material |
titanium |
Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
titanium: 1 |
Wafer size |
|
Equipment |
Wetbench |
Equipment characteristics: |
Wafer geometry Types of wafers this equipment can accept |
no-flat, 1-flat, 2-flat, notched |
Wafer holder Device that holds the wafers during processing. |
teflon carrier |
Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
glass (category), Pyrex (Corning 7740), quartz (single crystal), silicon |
Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 1500 µm |