Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Buffered oxide etch
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0.1 .. 5 µm
0.1 .. 5 µm
Batch size 25
Etch rate 0.07 µm/min
Etchant
Solutions and their concentrations.
 J.T. Baker Buffered Oxide Etchant 5419-03 VLSI Grade
Excluded materials gold (category), copper
Mask materials
Materials that can be used to mask etching.
 photoresist (category)
Material silicon dioxide
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 silicon dioxide: 1
Sides processed both
Temperature 20 °C
Wafer size
Wafer size
Equipment Air Control Microvoid
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 teflon carrier
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, silicon dioxide, Borofloat (Schott), alumina
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 1000 µm
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.