Buffered oxide etch: View
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Buffered oxide etch
Depth of material removed by etch process
Depth of material removed by etch process, must be 0.1 .. 5 µm
0.1 .. 5 µm
Solutions and their concentrations.
J.T. Baker Buffered Oxide Etchant 5419-03 VLSI Grade
gold (category), copper
Materials that can be used to mask etching.
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
silicon dioxide: 1
Air Control Microvoid
Device that holds the wafers during processing.
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon dioxide, Borofloat (Schott), alumina
List or range of wafer thicknesses the tool can accept
300 .. 1000 µm
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.
How to Start