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About MEMS
Gold wet etch: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
Anisotropic etch
Deep RIE
Isotropic etch
Miscellaneous etch
Strip
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
Gold wet etch
Process characteristics:
Depth
Depth of material removed by etch process
Depth
*
µm
nm
Depth of material removed by etch process, must be 0 .. 0.1 µm
0 .. 0.1 µm
Mask materials
Materials that can be used to mask etching.
photoresist (category)
Material
gold
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
gold: 1
Sides processed
both
Wafer size
Wafer size
75 mm
100 mm
Equipment
Wetbench
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
no-flat, 1-flat, 2-flat, notched
Wafer holder
Device that holds the wafers during processing.
teflon carrier
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
glass (category), Pyrex (Corning 7740), quartz (single crystal), silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1500 µm