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About MEMS
Ashing: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
Anisotropic etch
Deep RIE
Isotropic etch
Miscellaneous etch
Strip
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Ashing
Process characteristics:
Depth
Thickness of material to be removed.
Depth
Å
µm
nm
Thickness of material to be removed.
unconstrained
Etching source gases
Specify preferred source gases for the etch process (if known).
Etching source gases
Available
ammonia
ammonium
argon
boron trichloride
C4F8
carbon dioxide
carbon tetrafluoride
chlorine
chloropentafluorethane
dichlorosilane
freon
HBr
helium
HF
hydrogen
hydrogen chloride
methane
nitrogen
other
silane
sulfur hexafluoride
trifluoromethane
xenon difluoride
Selected
oxygen
Specify preferred source gases for the etch process (if known).
Material
Material to be etched.
Material
496K PMMA
950K PMMA
Arch OiR 620-7i
Arch OiR 897-10i
Arch OiR 897-12i
Arch OiR 906-17
AZ 1518
AZ 4330
AZ 4620
AZ 5214
AZ 5214e
AZ 7900
AZ 9245
AZ 9260
AZ HiR 1075
AZ nLOF 2070
AZ P4210
AZ P4400
AZ P9260
BARC
Durimide 112A
Durimide 115A
Durimide 32A
Durimide 7520
Dynachem OFPR
Futurrex NR5-8000
Futurrex NR9-8000
HR200 photoresist
kapton
NR1-6000PY
OCG 825 35CS
OCG 897-12i
OCG 897-21i
OCG 897-7i
other
photoresist (category)
photoresist (G-line)
PI2610
PI2611
PI2771
PMMA
PMMA with MMA
polyimide CG 284
ProTEK B1-18
ProTEK primer
Rogers R/Flex 8080
Shipley 1045
Shipley 1075
Shipley 1805
Shipley 1811
Shipley 1812
Shipley 1813
Shipley 1818
Shipley 1827
Shipley 220
Shipley 3612
Shipley SPR220-3
Shipley SPR220-7
Shipley SPR700 1.2
Shipley SPR955 CM-0.9
Shipley SPR955 CM-2.1
Shipley Ultra i-123
Shipley UV210
Shipley UV6
SU-8
ZEP 520
Material to be etched.
Sides processed
either
Equipment