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Photoresist develop (Shipley 220): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
Anisotropic etch
Deep RIE
Isotropic etch
Miscellaneous etch
Strip
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Photoresist develop (Shipley 220)
Batch size
1
Developer
Agent that reacts with masking layer (e.g., photoresist) to etch it selectively.
LDD 26W
Material
Shipley 220
Process duration
8 min
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
Shipley 220: 1
Sides processed
either
Temperature
90 °C
Wafer size
Wafer size
100 mm
Equipment
SVG developer
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
vacuum chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, glass (category), quartz (single crystal), silicon on sapphire, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 700 µm