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Process characteristics: |
Materials Material(s) to inspect.
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Excluded materials |
gold (category), copper |
Magnification |
20 .. 300000 |
Pressure Pressure of process chamber during processing |
1e-07 .. 10 Torr |
Sides inspected The sides of the wafer inspected by the process |
either |
Temperature |
-20 .. 1500 °C |
Wafer size |
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Equipment |
Philips XL-30 ESEM
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Equipment characteristics: |
Batch sizes |
100 mm: 1, 75 mm: 1 |
MOS clean |
no |
Piece dimension Range of wafer piece dimensions the equipment can accept |
5 .. 100 mm |
Piece geometry Geometry of wafer pieces the equipment can accept |
circular, irregular, other, rectangular, triangular shard |
Piece thickness Range of wafer piece thickness the equipment can accept |
0 .. 1 cm |
Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
Wafer holder Device that holds the wafers during processing. |
aluminum plate |
Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
alumina, BK7, Borofloat (Schott), ceramic, copper, Corning 1737, Foturan (Schott), fused silica, gallium arsenide, gallium phosphide, germanium, glass (Hoya), glass-ceramic, indium phosphide, lithium niobate, other, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon germanium, silicon on insulator, silicon on sapphire, titanium |
Wafer thickness List or range of wafer thicknesses the tool can accept |
0 .. 1 cm |
Comments: |
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Extra terms |
Customer agrees that wafers, masks, and other materials
incorporating any process(es) provided by this fabrication site
are to be used solely for non-commercial research
purposes.
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